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  ? semiconductor components industries, llc, 2012 november, 2012 ? rev. 11 1 publication order number: murd620ct/d murd620ctg, murd620ctt4g, NRVUD620CTG, nrvud620ctt4g switchmode power rectifier dpak surface mount package these state ? of ? the ? art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. features ? ultrafast 35 nanosecond recovery time ? low forward voltage drop ? low leakage ? esd rating: ? human body model = 3b (> 8 kv) ? machine model = c (> 400 v) ? nrvud prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free and are rohs compliant* mechanical characteristics: ? case: epoxy, molded ? weight: 0.4 gram (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. ultrafast rectifier 6.0 amperes 200 volts 1 3 4 http://onsemi.com dpak case 369c marking diagram device package shipping ? ordering information murd620ctt4g dpak (pb ? free) 2,500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. murd620ctg dpak (pb ? free) 75 units / rail a = assembly location y = year ww = work week u620t = device code g = pb ? free package ayww u 620tg NRVUD620CTG dpak (pb ? free) 75 units / rail nrvud620ctt4g dpak (pb ? free) 2,500 / tape & reel
murd620ctg, murd620ctt4g, NRVUD620CTG, nrvud620ctt4g http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 200 v average rectified forward current (rated v r , t c = 140 c) per diode per device i f(av) 3.0 6.0 a peak repetitive forward current (rated v r , square wave, 20 khz, t c = 145 c) per diode i f 6.0 a non ? repetitive peak surge current (surge applied at rated load conditions halfwave, 60 hz) i fsm 50 a operating junction and storage temperature range t j , t stg ? 65 to +175 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. thermal characteristics (per diode) characteristic symbol value unit thermal resistance, junction ? to ? case r  jc 9 c/w thermal resistance, junction ? to ? ambient (note 1) r  ja 80 c/w 1. rating applies when surface mounted on the minimum pad sizes recommended. electrical characteristics (per diode) characteristic symbol value unit maximum instantaneous forward voltage drop (note 2) (i f = 3 amps, t c = 25 c) (i f = 3 amps, t c = 125 c) (i f = 6 amps, t c = 25 c) (i f = 6 amps, t c = 125 c) v f 1 0.96 1.2 1.13 v maximum instantaneous reverse current (note 2) (t j = 25 c, rated dc voltage) (t j = 125 c, rated dc voltage) i r 5 250  a maximum reverse recovery time (i f = 1 amp, di/dt = 50 amps/  s, v r = 30 v, t j = 25 c) (i f = 0.5 amp, i r = 1 amp, i rec = 0.25 a, v r = 30 v, t j = 25 c) t rr 35 25 ns 2. pulse test: pulse width = 300  s, duty cycle 2.0%.
murd620ctg, murd620ctt4g, NRVUD620CTG, nrvud620ctt4g http://onsemi.com 3 0.0001 0.001 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 160 180 200 figure 1. typical forward voltage (per leg) v f, instantaneous voltage (v) 0 0.6 0.2 0.8 30 0.1 0.3 0.2 2.0 1.0 100 20 7.0 3.0 0.5 5.0 50 , instantaneous forward current (amps) f 1.4 v r , reverse voltage (v) t j = 175 c figure 2. typical leakage current* (per leg) i f(av) , average forward current (a) 0 3.0 2.0 0 2.0 1.0 3.0 5.0 4.0 14 7.0 6.0 p 1.0 10 figure 3. average power dissipation (per leg) 0.4 0.7 10 70 1.0 1.2 100 c t j = 25 c 175 c 100 c 25 c 6.0 5.0 4.0 9.0 8.0 7.0 9.0 8.0 * the curves shown are typical for the highest voltage device in the voltage grouping. typical reverse current for lower voltage selections can be estimated from these curves if v r is sufficiently below rated v r . i 150 c 11 10 13 12 , average power dissipation (watts) f(av) t j = 175 c i pk /i av = 20 sine wave square wave dc 10 5.0 150 c i r , reverse current (  a) t c , case temperature ( c) 100 1.0 2.0 3.0 4.0 5.0 i f(av) 0 6.0 7.0 8.0 110 120 130 140 150 160 170 180 figure 4. current derating, case (per leg) 020 1.0 1.5 2.5 3.5 4.0 0 40 60 80 100 t a , ambient temperature ( c) i f(av) figure 5. current derating, ambient (per leg) rated voltage applied r  jc = 9 c/w , average forward current (amps) sine wave or square wave dc , average forward current (amps) t j = 175 c 120 140 160 180 200 0.5 2.0 3.0 sine wave or square wave surface mounted on min. pad size recommended rated voltage applied r  ja = 80 c/w dc t j = 175 c
murd620ctg, murd620ctt4g, NRVUD620CTG, nrvud620ctt4g http://onsemi.com 4 v r , reverse voltage (v) figure 6. typical capacitance (per leg) c, capacitance (pf) 1 10 100 0 102030405060708090100 t j = 25 c
murd620ctg, murd620ctt4g, NRVUD620CTG, nrvud620ctt4g http://onsemi.com 5 package dimensions dpak (single gauge) case 369c issue d b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243  mm inches  scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw  on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 murd620ct/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative


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